Title of article
Scaling of flash NVRAM to 10ʹs of nm by decoupling of storage from read/sense using back-floating gates
Author/Authors
Kumar، نويسنده , , A.، نويسنده , , Tiwari، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
8
From page
247
To page
254
Keywords
hot carriers , EEPROM , nonvolatilememory , tunnel devices/effects. , flash memory , semiconductor memories
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2002
Journal title
IEEE Transactions on Nanotechnology
Record number
398317
Link To Document