Title of article
Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions
Author/Authors
Venugopal، نويسنده , , R.، نويسنده , , Zhibin Ren، نويسنده , , Lundstrom، نويسنده , , M.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
9
From page
135
To page
143
Keywords
Ballistic transport , Boundary conditions , subbandengineering.
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2003
Journal title
IEEE Transactions on Nanotechnology
Record number
398340
Link To Document