Title of article
Optimization of extrinsic source/drain resistance in ultrathin body double-gate FETs
Author/Authors
Shenoy، نويسنده , , R.S.، نويسنده , , Saraswat، نويسنده , , K.C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
265
To page
270
Keywords
Double-gate MOSFETs , MOS devices , Silicon , series resistance , simulation. , MOS device scaling , MOSFETs
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2003
Journal title
IEEE Transactions on Nanotechnology
Record number
398359
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