Title of article
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
Author/Authors
Yiming Li، نويسنده , , Hung-Mu Chou، نويسنده , , Jam-Wem Lee، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
510
To page
516
Keywords
three-dimensional (3-D) simulation , device structure , subthresholdswing (SS) , Nanowire , turn-on resistance. , Fabrication , nanodevice , omega-shaped-gate , on/off ratio , fin field-effect transistor (FinFET) , gate capacitance , surrounding gate , Coverage ratio , process technique , quantum correction model , Semiconductor devices
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2005
Journal title
IEEE Transactions on Nanotechnology
Record number
398521
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