Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

Yiming Li، نويسنده , , Hung-Mu Chou، نويسنده , , Jam-Wem Lee، نويسنده ,

روزنامه با شماره پیاپی سال 2005

7

510

516

three-dimensional (3-D) simulation , device structure , subthresholdswing (SS) , Nanowire , turn-on resistance. , Fabrication , nanodevice , omega-shaped-gate , on/off ratio , fin field-effect transistor (FinFET) , gate capacitance , surrounding gate , Coverage ratio , process technique , quantum correction model , Semiconductor devices

IEEE Transactions on Nanotechnology

2005

IEEE Transactions on Nanotechnology

398521