Title of article
Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors
Author/Authors
Saitoh، نويسنده , , M.، نويسنده , , Murakami، نويسنده , , T.، نويسنده , , Hiramoto، نويسنده , , T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
214
To page
218
Keywords
Room-temperature operation , silicon single-electrontransistor (SET) , thermal oxidation , thermally activated conduction , tunneling barrier height.
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2002
Journal title
IEEE Transactions on Nanotechnology
Record number
398552
Link To Document