Title of article :
Scaling of flash NVRAM to 10ʹs of nm by decoupling of storage from read/sense using back-floating gates
Author/Authors :
Kumar، نويسنده , , A.، نويسنده , , Tiwari، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
247
To page :
254
Keywords :
nonvolatilememory , tunnel devices/effects. , semiconductor memories , hot carriers , EEPROM , flash memory
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2002
Journal title :
IEEE Transactions on Nanotechnology
Record number :
398558
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398558
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