Title of article
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
Author/Authors
Yiming Li، نويسنده , , Hung-Mu Chou، نويسنده , , Jam-Wem Lee، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
510
To page
516
Keywords
surrounding gate , turn-on resistance. , Coverage ratio , Fabrication , device structure , Nanowire , gate capacitance , on/off ratio , quantum correction model , process technique , subthresholdswing (SS) , fin field-effect transistor (FinFET) , Semiconductor devices , omega-shaped-gate , nanodevice , three-dimensional (3-D) simulation
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2005
Journal title
IEEE Transactions on Nanotechnology
Record number
398762
Link To Document