Title of article
Subthreshold behavior of dual-bit nonvolatile memories with very small regions of trapped charge
Author/Authors
Perniola، M. نويسنده , , L.، نويسنده , , Iannaccone، نويسنده , , G.، نويسنده , , Ghibaudo، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
6
From page
373
To page
378
Keywords
second bit effect , SONOS. , Device modeling , dual-bit , nanocrystal memory , nonvolatile memory , NROM , reverse read , discrete-trap memory
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2006
Journal title
IEEE Transactions on Nanotechnology
Record number
398851
Link To Document