مرکز منطقه ای اطلاع رساني علوم و فناوري - Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps

Title of article :

Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps

Author/Authors :

Alam، نويسنده , , K.، نويسنده , , Lake، نويسنده , , R.، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2007

Pages :

From page :

652

To page :

658

Keywords :

Doped carbon nanotube , zero Schottkybarrier contact. , source/drain underlap , field effect transistor , doped source/drain contact

Journal title :

IEEE Transactions on Nanotechnology

Serial Year :

2007

Journal title :

IEEE Transactions on Nanotechnology

Record number :

398993

Link To Document :