Title of article :
Comments on “Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor
Author/Authors :
Nadarajah، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
2
From page :
100
To page :
101
Keywords :
Electron and hole current , integrals , n-i-p type , quantumdot transistor.
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2008
Journal title :
IEEE Transactions on Nanotechnology
Record number :
399021
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=399021
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