Title of article :
Vapor–Liquid Equilibria of Silicon by the Gibbs Ensemble Simulation
Author/Authors :
N. Honda and Y. Nagasaka ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Vapor-liquid equilibrium simulations of silicon were performed using the
Stillinger-Weber potential with the Gibbs ensemble MoInte Carlo method
(GEMC). In the low temperature region, from about 3000 to 3500 K, our
calculations show the stability of phases and good agreement with several
experimental results. On the whole, there is little dependence on the size of the
system except near the estimated critical point of silicon: TQ = 7500 + 500 K and
pc = 750± 100 k g - m ~ 3 as determined by the law of rectilinear diameter. Above
3500 K, vapor-liquid coexistence properties which have not been obtained by
experiment are derived.
Keywords :
Gibbs ensemble , Silicon , simulations , vaporliquidequilibria , critical point
Journal title :
International Journal of Thermophysics
Journal title :
International Journal of Thermophysics