• Title of article

    Vapor–Liquid Equilibria of Silicon by the Gibbs Ensemble Simulation

  • Author/Authors

    N. Honda and Y. Nagasaka ، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    10
  • From page
    837
  • To page
    846
  • Abstract
    Vapor-liquid equilibrium simulations of silicon were performed using the Stillinger-Weber potential with the Gibbs ensemble MoInte Carlo method (GEMC). In the low temperature region, from about 3000 to 3500 K, our calculations show the stability of phases and good agreement with several experimental results. On the whole, there is little dependence on the size of the system except near the estimated critical point of silicon: TQ = 7500 + 500 K and pc = 750± 100 k g - m ~ 3 as determined by the law of rectilinear diameter. Above 3500 K, vapor-liquid coexistence properties which have not been obtained by experiment are derived.
  • Keywords
    Gibbs ensemble , Silicon , simulations , vaporliquidequilibria , critical point
  • Journal title
    International Journal of Thermophysics
  • Serial Year
    1999
  • Journal title
    International Journal of Thermophysics
  • Record number

    426520