Title of article :
Thermal Conductivity of AlN and SiC Thin Films
Author/Authors :
Sun Rock Choi، نويسنده , , Dongsik Kim، نويسنده , , Sung-Hoon Choa، نويسنده , , Sung-Hoon Lee and Jong-Kuk Kim ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
10
From page :
896
To page :
905
Abstract :
The thermal conductivity of AlN and SiC thin films sputtered on silicon substrates is measured employing the 3ω method. The thickness of the AlN sample is varied in the range from 200 to 2000nm to analyze the size effect. The SiC thin films are prepared at two different temperatures, 20 and 500◦C, and the effect of deposition temperature on thermal conductivity is examined. The results reveal that the thermal conductivity of the thin films is significantly smaller than that of the same material in bulk form. The thermal conductivity of the AlN thin film is strongly dependent on the film thickness. For the case of SiC thin films, however, increased deposition temperature results in negligible change in the thermal conductivity as the temperature is below the critical temperature for crystallization. To explain the thermal conduction in the thin films, the thermal conductivity and microstructure are compared using x-ray diffraction patterns.
Keywords :
3? method , silicon carbide , Thickness , thin film. , thermal conductivity , Aluminum nitride
Journal title :
International Journal of Thermophysics
Serial Year :
2006
Journal title :
International Journal of Thermophysics
Record number :
427359
Link To Document :
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