Title of article :
Thermal Conductivity of AlN and SiC Thin Films
Author/Authors :
Sun Rock Choi، نويسنده , , Dongsik Kim، نويسنده , , Sung-Hoon Choa، نويسنده , , Sung-Hoon Lee and Jong-Kuk Kim ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
The thermal conductivity of AlN and SiC thin films sputtered on silicon
substrates is measured employing the 3ω method. The thickness of the AlN sample
is varied in the range from 200 to 2000nm to analyze the size effect. The
SiC thin films are prepared at two different temperatures, 20 and 500◦C, and
the effect of deposition temperature on thermal conductivity is examined. The
results reveal that the thermal conductivity of the thin films is significantly smaller
than that of the same material in bulk form. The thermal conductivity of the
AlN thin film is strongly dependent on the film thickness. For the case of SiC
thin films, however, increased deposition temperature results in negligible change
in the thermal conductivity as the temperature is below the critical temperature
for crystallization. To explain the thermal conduction in the thin films, the
thermal conductivity and microstructure are compared using x-ray diffraction
patterns.
Keywords :
3? method , silicon carbide , Thickness , thin film. , thermal conductivity , Aluminum nitride
Journal title :
International Journal of Thermophysics
Journal title :
International Journal of Thermophysics