Density and Thermal Conductivity Measurements for Silicon Melt by Electromagnetic Levitation under a Static Magnetic Field

The density and thermal conductivity of a high-purity silicon melt were measured over a wide temperature range including the undercooled regime by non-contact techniques accompanied with electromagnetic levitation (EML) under a homogeneous and static magnetic field. The maximum undercooling of 320K for silicon was controlled by the residual impurity in the specimen, not by the melt motion or by contamination of the material. The temperature dependence of the measured density showed a linear relation for temperature as: ρ(T )=2.51×103 −0.271(T −Tm) kg ·m−3 for 1367K