Title of article
IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions
Author/Authors
Zhanping Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
10
From page
24
To page
33
Abstract
The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, I DDQ testing requires different techniques to remain effective
Journal title
IEEE Design and Test of Computers
Serial Year
2002
Journal title
IEEE Design and Test of Computers
Record number
431379
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