Title of article :
Low-Power Design Using Multiple Channel Lengths and Oxide Thicknesses
Author/Authors :
Naran Sirisantana، نويسنده , , Intel Kaushik Roy، نويسنده , , Purdue University ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
8
From page :
56
To page :
63
Abstract :
Two CMOS design techniques use dual threshold voltages to reduce power consumption while maintaining high performance. Simulation results show power savings of 21% for one technique at low activity, and for the other, 19% at high activity and 38% at tow activity.
Journal title :
IEEE Design and Test of Computers
Serial Year :
2004
Journal title :
IEEE Design and Test of Computers
Record number :
431469
Link To Document :
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