Title of article
MOSFET Mismatch Modeling: A New Approach
Author/Authors
Hamilton Klimach، نويسنده , , Federal University of Rio Grande do Sul Carlos Galup-Montoro، نويسنده , , Federal University of Santa Catarina M?rcio C. Schneider، نويسنده , , Federal University of Santa Catarina Alfredo Arnaud، نويسنده , , Catholic University of Uruguay ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
10
From page
20
To page
29
Abstract
Digital and analog ICs generally rely on the concept of matched behavior between identically designed devices. Time-independent variations between identically designed transistors, called mismatch, affect the performance of most analog and even digital MOS circuits. This article focuses on the analysis of mismatch in MOS transistors resulting from random fluctuations of the dopant concentration, first studied by Keyes. Today, we recognize these fluctuations as the main cause of mismatch in bulk CMOS transistors.
Journal title
IEEE Design and Test of Computers
Serial Year
2006
Journal title
IEEE Design and Test of Computers
Record number
431635
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