Title of article :
Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part II. Application to InxGa1−xAs/InP system
Author/Authors :
Saebom Lee، نويسنده , , Seung T. Choi، نويسنده , , Youn Y. Earmme، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
Cracking phenomena in tensile-strained InxGa1 xAs epitaxial film on an InP substrate are analyzed via the formulation
given in Part I [Lee, S., Choi, S.T., Earmme, Y.Y., 2006. Analysis of vertical cracking phenomena in tensilestrained
epitaxial film on a substrate: Part I. Mathematical formulation. International Journal of Solids and Structures
43, 3401–3413], where the solution for a dislocation in an anisotropic trimaterial is used as a fundamental solution and
the crack is modeled by the continuous distribution of dislocations. Misfit strains and stresses are evaluated as a function
of indium content x in an InxGa1 xAs/InP system. A single crack and periodic cracks, respectively, induced by
the misfit stresses are considered. The crack opening profile, the crack mouth displacement, and the energy release rate
as a function of the crack length are obtained. The critical conditions for a single crack and periodic cracks, respectively,
are thus obtained, and are found to depend on the film thickness, the crack length, and the period of the
cracks. The results of these analyses are also compared with published data obtained from experiments
Keywords :
Channeling crack , Anisotropic elasticity , Criticalcondition for crack formation , Epitaxial film/substrate system , Periodic array of channeling cracks
Journal title :
International Journal of Solids and Structures
Journal title :
International Journal of Solids and Structures