Title of article
Numerical Simulation of Unidirectional Infiltration of Silicon Carbide Preforms
Author/Authors
ZHANG، Xuexi نويسنده , , WANG، Dezun نويسنده , , DING، Dongyan نويسنده , , YAO، Congkai نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-10
From page
11
To page
0
Abstract
We consider an "oriented" chiral condensate produced in the squeezed states of the effective field theory with time- and space-dependent pion mass parameter. We discuss the general properties of the solution, identifying condensate modes and determining the resulting pion distributions. The implementation of the dynamics in the form of sudden perturbation allows us to look for exact solutions. In the region of condensation, the dramatic increase in pion production and charge fluctuations are demonstrated.
Keywords
Single-particle potential , single-particle level
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Serial Year
2001
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Record number
45114
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