Title of article
Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs|GaAs/Al0.3Ga0.7As multiple quantum well electrode
Author/Authors
Liu، Yao نويسنده , , Xiao، Xu-Rui نويسنده , , Zeng، Yi-Ping نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
-403
From page
404
To page
0
Abstract
novel composite InxGa1-xAs/GaAs|GaAs/AlxGa1-xAs multiple quantum well aterial with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent¯electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed.
Keywords
Bismuth electrode , Adsorptive stripping voltammetry , nickel , Dimethylglyoxime
Journal title
ELECTROCHEMISTRY COMMUNICATIONS
Serial Year
2000
Journal title
ELECTROCHEMISTRY COMMUNICATIONS
Record number
54833
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