Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method

GaAs:Si/GaAs films heavily doped with Si were investigated by complex methods including X-ray diffractometrical measurement of diffraction maximum integral intensity for a quasi-forbidden reflection of the continuous spectrum wavelengths permitting determination of defect structure parameters, i.e. mean radius and concentration of precipitates and chemical composition violation (level of nonstoichiometry), as well as second ion mass spectroscopy (SIMS), measurements of electrophysical parameters. The level of nonstoichiometry was shown to depend on parameters of defect structure. The conclusion was drawn about interaction on point defects with precipitates enriched with silicon atoms.