Title of article :
Class-E MOSFET tuned power oscillator design procedure
Author/Authors :
M.K.، Kazimierczuk, نويسنده , , V.G.، Krizhanovski, نويسنده , , J.V.، Rassokhina, نويسنده , , D.V.، Chernov, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
-1137
From page :
1138
To page :
0
Abstract :
A complete design procedure of a Class-E oscillator for a duty cycle of 0.5 is presented. It is based on an analytical solution of equations, which describe oscillator operation for steady state. General equations for all oscillator component values are given. Using the proposed procedure, the components were calculated for an example oscillator. The oscillator was built and tested using an MTP3055E power MOSFET. The efficiency and output power versus frequency, and the oscillation frequency versus dc supply voltage were measured. At V/sub DD/=4.5 V, the measured oscillation frequency was 800 kHz, the output power was 0.953 W, and the efficiency was 82%.
Journal title :
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Serial Year :
2005
Journal title :
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Record number :
61430
Link To Document :
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