Author/Authors :
A.، Vilches, نويسنده , , K.، Fobelets, نويسنده , , K.، Michelakis, نويسنده , , S.، Despotopoulos, نويسنده , , C.، Papavassiliou, نويسنده , , T.، Hackbarth, نويسنده , , U.، Konig, نويسنده ,
Abstract :
The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-(mu)W total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included.
