• Title of article

    A 1.76-GHz 22.6-mW /spl Delta//spl Sigma/ fractional-n frequency synthesizer

  • Author/Authors

    R.، Ahola, نويسنده , , K.، Halonen, نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    -137
  • From page
    138
  • To page
    0
  • Abstract
    A /spl Delta//spl Sigma/ fractional-N frequency synthesizer for the 2-GHz-range wireless communication applications is implemented in a 0.35-/spl mu/m BiCMOS process, using only CMOS components. The synthesizer achieves a close-in phase noise of -81 dBc/Hz, while the spurious tones are at -85 dBc. The synthesizer features a multiple-modulus prescaler employing the phase-switching architecture to minimize the power dissipation. The entire prescaler, including the gigahertz-speed first stages, is implemented using full-swing logic. The current source structure employed in the charge pump provides a constant output current over a wide, almost rail-to-rail output voltage range. The power dissipation of the synthesizer chip is 22.6 mW from a 2.7-V supply.
  • Keywords
    TiNi film , transformation , Oriented martensite , Self-accommodating martensite
  • Journal title
    IEEE Journal of Solid- State Circuits
  • Serial Year
    2003
  • Journal title
    IEEE Journal of Solid- State Circuits
  • Record number

    62837