Title of article
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Author/Authors
K.J.، Chen, نويسنده , , Niu، Guofu نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-311
From page
312
To page
0
Abstract
The circuit concept of programmable logic gates based on the controlled quenching of series-connected negative differential resistance (NDR) devices is introduced, along with the detailed logic synthesis and circuit modeling. At the rising edge of a clocked supply voltage, the NDR devices are quenched in the ascending order of peak currents that can be reordered by the control gates and input gates biases, thus, providing programmable logic functions. The simulated results agree well with the experimental demonstration of the programmable logic gate fabricated by a monolithic integrated resonant tunneling diode/high electron mobility transistor technology.
Keywords
TiNi film , Self-accommodating martensite , transformation , Oriented martensite
Journal title
IEEE Journal of Solid- State Circuits
Serial Year
2003
Journal title
IEEE Journal of Solid- State Circuits
Record number
62867
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