Author/Authors :
R.، Gharpurey, نويسنده , , N.، Yanduru, نويسنده , , F.، Dantoni, نويسنده , , P.، Litmanen, نويسنده , , G.، Sirna, نويسنده , , T.، Mayhugh, نويسنده , , C.، Lin, نويسنده , , I.، Deng, نويسنده , , P.، Fontaine, نويسنده , , Lin، Fang نويسنده ,
Abstract :
A highly integrated direct-conversion receiver that satisfies requirements of the third-generation wide-band code-division multiple-access mobile phone standard is described. The receiver integrated circuit includes the front-end low-noise amplifier, downconversion mixers, baseband variable-gain amplifiers, channel-select filters, and the frequency synthesizer. External components are limited to matching elements required for the low-noise amplifier and the mixers and two passive band-select filters. The receiver is implemented in a SiGe BiCMOS process and consumes a total current of 46 mA from a 2.7-V supply.
Keywords :
transformation , Self-accommodating martensite , Oriented martensite , TiNi film
