Title of article :
A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C curvature-compensated CMOS bandgap voltage reference
Author/Authors :
Leung، Ka Nang نويسنده , , P.K.T.، Mok, نويسنده , , Leung، Chi Yat نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-/spl mu/m CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C at a 2-V supply and a line regulation of /spl plusmn/1.43 mV/V at 27/spl deg/C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.
Keywords :
TiNi film , transformation , Oriented martensite , Self-accommodating martensite
Journal title :
IEEE Journal of Solid- State Circuits
Journal title :
IEEE Journal of Solid- State Circuits