• Title of article

    A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C curvature-compensated CMOS bandgap voltage reference

  • Author/Authors

    Leung، Ka Nang نويسنده , , P.K.T.، Mok, نويسنده , , Leung، Chi Yat نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    -560
  • From page
    561
  • To page
    0
  • Abstract
    A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-/spl mu/m CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C at a 2-V supply and a line regulation of /spl plusmn/1.43 mV/V at 27/spl deg/C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.
  • Keywords
    TiNi film , transformation , Oriented martensite , Self-accommodating martensite
  • Journal title
    IEEE Journal of Solid- State Circuits
  • Serial Year
    2003
  • Journal title
    IEEE Journal of Solid- State Circuits
  • Record number

    62897