Noncontact measurement of charge induced voltage shift in capacitive MEM-switches

The use of a modulated microwave signal to directly measure the voltage shift induced by charge in the dielectric layer of a capacitive microelectromechanical (MEM) switch is presented. This method does not require the metal bridge to contact the dielectric layer and is thus much less intrusive than previously reported measurements. The technique is a useful tool for understanding charge build up and dissipation in capacitive MEM switches.