Title of article :
A K-band InGaP/GaAs HBT balanced MMIC VCO
Author/Authors :
Park، Jae-Woo نويسنده , , Kim، Jeonggeun نويسنده , , Hong، Songcheol نويسنده , , Baek، Dong-Hyun نويسنده , , Jeon، Sanghoon نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84*1.00 mm/sup 2/.
Journal title :
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Journal title :
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS