Title of article :
Influence of the SRO as passivation layer on the microwave attenuation losses of the CPWs fabricated on HR-Si
Author/Authors :
J.A.، Reynoso-Hernandez, نويسنده , , R.، Rangel-Rojo, نويسنده , , M.، Aceves, نويسنده , , I.، Zaldivar, نويسنده , , L.E.، Sanchez, نويسنده , , M.، Herrera, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-507
From page :
508
To page :
0
Abstract :
In this letter, silicon rich oxide (SRO) is used as the passivation layer of coplanar wave guides (CPWs) fabricated on high resistivity silicon (HR-Si). The microwave performance of the CPWs is evaluated computing the attenuation loss ((alpha)) of the device in the 0.045-50 GHz frequency range. It is shown that for frequencies lower than 5 GHz the losses of CPWs using SRO as a passivation layer are lower than those of CPWs using SiO/sub 2/. It is also shown that using a combination of thermal and CVD SiO/sub 2/, a reduction of the losses of CPWs is obtained.
Keywords :
Power-aware
Journal title :
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Serial Year :
2003
Journal title :
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Record number :
66129
Link To Document :
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