Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

Modeling procedures of an AlGaN/GaN HFET that incorporate the effects of both a GaN cap layer and an AlN sub-buffer layer are presented. A single off-state measurement method to extract all eight parasitic elements of an enhanced HFET has been successfully applied. In addition, procedures to model the nonlinear drain-tosource current characteristics featuring a kink are described.