High-frequency noise in AlGaN/GaN HFETs

We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device highfrequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies.