Title of article :
Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces
Author/Authors :
Arnault، J.C. نويسنده , , Demuynck، L. نويسنده , , Speisser، C. نويسنده , , Normand، F. Le نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-326
From page :
327
To page :
0
Abstract :
By using integral representations the perturbation expansion and the Bogoliubov inequality ain nonextensive Tsallis statistics are investigated in a unified way. This procedure extends the analysis performed recently by Lenzi et al. [Phys. Rev. Lett. 80, 218 (1998)] to the quantum (discrete spectra) case, for q < 1. An example is presented in order to illustrate the method.
Keywords :
Fullerenes and related materials , diamonds , Graphite , Chemical vapor deposition , including plasma , enhanced CVD , MOCVD , Surface and interface chemistry
Journal title :
EUROPEAN PHYSICAL JOURNAL B
Serial Year :
1999
Journal title :
EUROPEAN PHYSICAL JOURNAL B
Record number :
6792
Link To Document :
بازگشت