Morphological examination of Cu3N thin film growth by a stochastic simulation

A Stochastic simulation method was employed to simulate three dimensional figures of copper nitride thin films at different partial pressure of nitrogen via Reactive DC Magnetron Sputtering on silicon. In order to analyze surface morphology and delve into the growth process we have designed and improved some models. We let each particle experience different events at the time and after reaching the surface. In addition to the morphology, saturation time and roughness changes over the time have been examined. In this paper, we have focused our studies on Cu3N thin films which have shown noticeable and lots of novel characteristics.