Simulation and optimization of optical performance of InP-based long-wavelength vertical cavity surface emitting laser with selectively tunnel junction aperture

In this paper, we have studied the optical behavior of InGaAlAs /InP vertical cavity surface emitting laser emitting at 1.305 ?m using simulation software PICS3D which self-consistently combines the three dimensional simulation of carrier transport, self–heating and optical wave–guiding. The gain–carrier characteristics of multi quantum well active region and features of the output light are investigated numerically. We could optimize the vertical cavity surface emitting laser (VCSEL) structure by using Linear Graded – Index Separate Confinement Heterostructure that minimizes electron current leakage from multi quantum well (MQW). The optimized structure also enhances the stimulated recombination and decreases the Auger recombination rate.