Title of article
Two-dimensional electron systems in inversion layers of p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures
Author/Authors
Granger، R. نويسنده , , Rousiere، O. نويسنده , , Lemoine، D. نويسنده , , Folliot، H. نويسنده , , Hinooda، S. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-490
From page
491
To page
0
Abstract
By using integral representations the perturbation expansion and the Bogoliubov inequality ain nonextensive Tsallis statistics are investigated in a unified way. This procedure extends the analysis performed recently by Lenzi et al. [Phys. Rev. Lett. 80, 218 (1998)] to the quantum (discrete spectra) case, for q < 1. An example is presented in order to illustrate the method.
Keywords
including semiconductor-to-insulator , Electrical and magnetic properties (related to treatment conditions) , Quantum well structures , Superlattices , multilayers , Metal-insulator-semiconductor structures , Electron states in low-dimensional structures
Journal title
EUROPEAN PHYSICAL JOURNAL B
Serial Year
1999
Journal title
EUROPEAN PHYSICAL JOURNAL B
Record number
6826
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