Author/Authors :
Manavizadeh، Negin نويسنده Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran, I.R. IRAN , , Khodayari، Ali Reza نويسنده Faculty of Mechanical Engineering, K.N. Toosi University of Technology, Tehran, I.R. IRAN , , Asl Soleimani، Ebrahim نويسنده , , Bagherzadeh، Sheyda نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN ,
Abstract :
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural and morphological properties of the ITO films were analyzed by four point probe, UV/VIS/IR spectrophotometer, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM). The quality of films deposited on buffer layer is found to be superior to those grown directly
on a substrate. The structural, optical and electrical studies reveal that ZnO buffer layers improve the crystalline quality, optical and electrical properties of ITO thin films.
