Title of article :
Diamond growth on aluminium substrate by HFCVD using different etching gasses
Author/Authors :
Khalaj، Z نويسنده , , Taheri، S.Z نويسنده , , Nasiri Laheghi، S نويسنده , , Alizadeh Eslami، P نويسنده ,
Issue Information :
فصلنامه با شماره پیاپی 0 سال 2009
Abstract :
Diamond nano crystals and nano crystalline diamond films have been synthesized on an Aluminium substrate
by Hot Filament Chemical Vapor Deposition (HFCVD) system in a CH4/H2 gas mixture. This study focuses on the
effect of etching gasses, N2, NH3, and, H2 on diamond growth on Al substrate. The optimal conditions were found to
be: gas flow rate = 330 sccm, substrate temperature Ts = 500
°
C, and reaction pressure = 30 Torr. Good quality dia-
mond nano crystals with (111) crystallite were grown on the Al substrate by H2 as the etching gas. In terms of mor-
phology, the analyses were carried out by Scanning Electron Microscopy (SEM). The crystallinity of the Diamond
nano crystal films and nano crystalline diamonds were analyzed by X-Ray Diffraction (XRD) analysis.
Journal title :
Journal of Theoretical and Applied Physics
Journal title :
Journal of Theoretical and Applied Physics