• Title of article

    Diamond growth on aluminium substrate by HFCVD using different etching gasses

  • Author/Authors

    Khalaj، Z نويسنده , , Taheri، S.Z نويسنده , , Nasiri Laheghi، S نويسنده , , Alizadeh Eslami، P نويسنده ,

  • Issue Information
    فصلنامه با شماره پیاپی 0 سال 2009
  • Pages
    4
  • From page
    19
  • To page
    22
  • Abstract
    Diamond nano crystals and nano crystalline diamond films have been synthesized on an Aluminium substrate by Hot Filament Chemical Vapor Deposition (HFCVD) system in a CH4/H2 gas mixture. This study focuses on the effect of etching gasses, N2, NH3, and, H2 on diamond growth on Al substrate. The optimal conditions were found to be: gas flow rate = 330 sccm, substrate temperature Ts = 500 ° C, and reaction pressure = 30 Torr. Good quality dia- mond nano crystals with (111) crystallite were grown on the Al substrate by H2 as the etching gas. In terms of mor- phology, the analyses were carried out by Scanning Electron Microscopy (SEM). The crystallinity of the Diamond nano crystal films and nano crystalline diamonds were analyzed by X-Ray Diffraction (XRD) analysis.
  • Journal title
    Journal of Theoretical and Applied Physics
  • Serial Year
    2009
  • Journal title
    Journal of Theoretical and Applied Physics
  • Record number

    690384