Title of article
Diamond growth on aluminium substrate by HFCVD using different etching gasses
Author/Authors
Khalaj، Z نويسنده , , Taheri، S.Z نويسنده , , Nasiri Laheghi، S نويسنده , , Alizadeh Eslami، P نويسنده ,
Issue Information
فصلنامه با شماره پیاپی 0 سال 2009
Pages
4
From page
19
To page
22
Abstract
Diamond nano crystals and nano crystalline diamond films have been synthesized on an Aluminium substrate
by Hot Filament Chemical Vapor Deposition (HFCVD) system in a CH4/H2 gas mixture. This study focuses on the
effect of etching gasses, N2, NH3, and, H2 on diamond growth on Al substrate. The optimal conditions were found to
be: gas flow rate = 330 sccm, substrate temperature Ts = 500
°
C, and reaction pressure = 30 Torr. Good quality dia-
mond nano crystals with (111) crystallite were grown on the Al substrate by H2 as the etching gas. In terms of mor-
phology, the analyses were carried out by Scanning Electron Microscopy (SEM). The crystallinity of the Diamond
nano crystal films and nano crystalline diamonds were analyzed by X-Ray Diffraction (XRD) analysis.
Journal title
Journal of Theoretical and Applied Physics
Serial Year
2009
Journal title
Journal of Theoretical and Applied Physics
Record number
690384
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