A High Characteristic Temperature GaInAsN-Based VCSEL at 1.3 µm regime

The temperature dependence of lasing wavelength in 1.3-1.5 µm-range GaInNAs based low dimensional emitters is found to be quite small. We report room temperature (RT) GaInAsN vertical-cavity surface emitting laser emission at 1.3 ?m developed using MBE with plasma source for nitrogen activation. RT photopumped operation is demon- strated at a wavelength of 1283 nm. Stimulated emission was observed to a record high temperature of 143 C, result- ing in an emission wavelength of 1294 nm.