Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions

In this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for semiconductors with physical contact-insulating boundary conditions is studied in one-dimensional case. The quasi-neutral limit (zero-Debye-length limit) is proved by using the asymptotic expansion methods of singular perturbation theory and the classical energy methods. Our results imply that one kind of the new and interesting phenomena in semiconductor physics occurs.