Title of article :
Nonlinear and Bistable Reflection Minima at (lambda) = 10.6 (mu)m in an Attenuated Total Reflection Configuration with a Highly Doped n -GaAs Film
Author/Authors :
Vounckx، Roger نويسنده , , Shkerdin، Gennady نويسنده , , Stiens، Johan نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-1131
From page :
1132
To page :
0
Abstract :
We demonstrated an intrinsic conversion efficiency of 56% from the input fundamental power to the generated second-harmonic power. The second-harmonic power of 581 mW was obtained from the external cavity with a LiB3 O5 crystal through the frequency doubling of a 1.17-W Ti:sapphire laser at 746 nm, when the finesse of the robust external cavity was 260.
Keywords :
including MQW , Semiconductors , Bistability , Optical properties , thin films
Journal title :
Applied Optics
Serial Year :
2003
Journal title :
Applied Optics
Record number :
75351
Link To Document :
بازگشت