Author/Authors :
Bakhtiari، Mehdi نويسنده Faculty of Engineering, Science and Research Branch, Islamic Azad University, Saveh, Iran , , Panahi، Abdorreza نويسنده Department of Mathematics, Saveh Branch, Islamic Azad University, Saveh, Iran , , Gandomkar koli، Majid نويسنده ,
Abstract :
In this paper the electron transport properties in zigzag-type Carbon Nanotube Field Effect Transistors(CNTFETs) are investigated. CNTFETs can be fabricated using ohmic or Schottky type contacts .We focus here on Schottky barrier CNTFETs which operate by thermionic emission through a Schottky barrier. The Schottky barrier is formed at the interface between the metal electrodes associated with source/drain and the semiconductor-type carbon nanotube (CNT) forming the channel of the FET. The behavior of these devices has been studied by using Landau–Butinger equation. In particular, the variations in the drain current have been calculated as a function of the gate-to-source voltage, temperature and the diameter of the CNT.
