Title of article :
Studies on the relaxor behavior of sol-gel derived Ba(Zrx Ti1−x)O3 (0.30≤x≤0.70) thin films
Author/Authors :
A. DIXIT، نويسنده , , S. B. Majumder، نويسنده , , R. S. Katiyar، نويسنده , , A. S. BHALLA، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
10
From page :
87
To page :
96
Abstract :
We have studied the relaxor behavior of sol-gel derived Ba(Zrx Ti1−x)O3 (0.30≤ x≤0.70) thin films. The plausible mechanism of the relaxor behavior has been analyzed from the dielectric data and micro-Raman spectra. Substitution of Zr+4 for Ti+4 in BaTiO3 lattice reduces its long-range polarization order yielding a diffused paraelectric to ferroelectric phase transition. The solid solution system is visualized as a mixture of Ti+4 rich polar region and Zr+4 rich regions and with the increase in Zr contents the volume fraction of the polar regions are progressively reduced. At about 25.0 at% Zr contents the polar regions exhibit typical relaxor behavior. The degree of relaxation increases with Zr content and maximizes at 40.0 at% Zr doped film. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (Tf). Below Tf, a long range polarization ordering was ascertained from the polarization hysteresis measurement. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
830493
Link To Document :
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