Title of article
Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition
Author/Authors
XIYING MA، نويسنده , , WEILIN SHI، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
4
From page
1025
To page
1028
Abstract
The size effect of optical properties of the polycrystalline Ge/Si films prepared by pulse laser
deposition (PLD) is investigated by photoluminescence (PL) and photocurrent (PC) spectra. The
size of Ge nanocrystals is precisely controlled by the pulsed deposition time and then observed
by the atomic force microscopy (AFM). The average size of Ge nanocrystals is about 2, 5 and
25 nm for 1, 2 and 3 min deposited sample, respectively. The size effect on optical properties of
Ge nanocrystals has been analyzed by photoluminescence (PL) and photocurrent (PC) spectra.
The PL peaks shift from 0.799 eV for 1 min to 0.762 eV for 3 mins; at the same time, the
photocurrent peaks of the films sharply changes from 0.781 eV to 0.749 eV, the shifts of PL and
PC are contributed to the quantum size effect of Ge nanocrystals.
C 2006 Springer Science + Business Media, Inc.
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
830587
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