• Title of article

    Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition

  • Author/Authors

    XIYING MA، نويسنده , , WEILIN SHI، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    1025
  • To page
    1028
  • Abstract
    The size effect of optical properties of the polycrystalline Ge/Si films prepared by pulse laser deposition (PLD) is investigated by photoluminescence (PL) and photocurrent (PC) spectra. The size of Ge nanocrystals is precisely controlled by the pulsed deposition time and then observed by the atomic force microscopy (AFM). The average size of Ge nanocrystals is about 2, 5 and 25 nm for 1, 2 and 3 min deposited sample, respectively. The size effect on optical properties of Ge nanocrystals has been analyzed by photoluminescence (PL) and photocurrent (PC) spectra. The PL peaks shift from 0.799 eV for 1 min to 0.762 eV for 3 mins; at the same time, the photocurrent peaks of the films sharply changes from 0.781 eV to 0.749 eV, the shifts of PL and PC are contributed to the quantum size effect of Ge nanocrystals. C 2006 Springer Science + Business Media, Inc.
  • Journal title
    Journal of Materials Science
  • Serial Year
    2006
  • Journal title
    Journal of Materials Science
  • Record number

    830587