• Title of article

    Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass

  • Author/Authors

    X. M. FAN، نويسنده , , J. S. LIAN?، نويسنده , , Z. X. Guo، نويسنده , , L. ZHAO، نويسنده , , Q. JIANG، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    2237
  • To page
    2241
  • Abstract
    The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K∼973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K∼873 K and decreased with increasing annealing temperature in the range of 873 K∼973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band. C 2006 Springer Science + Business Media, Inc
  • Journal title
    Journal of Materials Science
  • Serial Year
    2006
  • Journal title
    Journal of Materials Science
  • Record number

    830759