Title of article :
Structural investigation of Ge–Sb–Sn thin films using transmission electron microscopy
Author/Authors :
M. Naito، نويسنده , , M. ISHIMARU، نويسنده , , Y. Hirotsu and A. Makino، نويسنده , , M. TAKASHIMA، نويسنده , , H. MATSUMOTO، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
5
From page :
2615
To page :
2619
Abstract :
Atomistic structures of as-deposited and laser-induced-crystallized Ge–Sb–Sn layers have been examined using high-resolution electron microscopy (HREM) and nanobeam electron diffraction (NBED). Cross-sectional observations were performed on Ge–Sb–Sn thin films embedded in a multi-layered structure. Crystalline clusters were frequently observed in the HREM images of the as-deposited amorphous Ge–Sb–Sn thin film. Autocorrelation function analysis of the HREM image indicated a similarity between the structures of the crystalline clusters and that of rhombohedral Sb. Atomic pair-distribution functions obtained from the halo NBED intensity of the as-deposited amorphous Ge–Sb–Sn films also showed development of local structure whose atomic configuration is similar to that of the rhombohedral Sb. NBED revealed that the structure of the crystallized Ge–Sb–Sn thin film is also close to that of rhombohedral Sb. The atomistic structures of Ge–Sb–Sn thin films were compared with those of Ge–Sb–Te thin films and the rapid crystallization mechanism of these materials was discussed. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
830813
Link To Document :
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