Title of article :
Structural investigation of Ge–Sb–Sn thin films
using transmission electron microscopy
Author/Authors :
M. Naito، نويسنده , , M. ISHIMARU، نويسنده , , Y. Hirotsu and A. Makino، نويسنده , , M. TAKASHIMA، نويسنده , , H. MATSUMOTO، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Abstract :
Atomistic structures of as-deposited and laser-induced-crystallized Ge–Sb–Sn layers have been
examined using high-resolution electron microscopy (HREM) and nanobeam electron
diffraction (NBED). Cross-sectional observations were performed on Ge–Sb–Sn thin films
embedded in a multi-layered structure. Crystalline clusters were frequently observed in the
HREM images of the as-deposited amorphous Ge–Sb–Sn thin film. Autocorrelation function
analysis of the HREM image indicated a similarity between the structures of the crystalline
clusters and that of rhombohedral Sb. Atomic pair-distribution functions obtained from the halo
NBED intensity of the as-deposited amorphous Ge–Sb–Sn films also showed development of
local structure whose atomic configuration is similar to that of the rhombohedral Sb. NBED
revealed that the structure of the crystallized Ge–Sb–Sn thin film is also close to that of
rhombohedral Sb. The atomistic structures of Ge–Sb–Sn thin films were compared with those
of Ge–Sb–Te thin films and the rapid crystallization mechanism of these materials was
discussed. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science