Title of article :
Study of various strain energy distribution in InGaN/GaN multiple quantum wells
Author/Authors :
YEN-SHENG LIN، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
6
From page :
2953
To page :
2958
Abstract :
The formation of In-rich quantum dot structures will induce strain energy in the quantum well layer, forming the clusters and stacking faults influencing the optical properties. Our results showed different QW widths with the formation of various In-rich quantum dot structures and different levels of strain energy. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. The results of temperature variations of PL spectral peak, integrated PL intensity and PL decay time showed consistent trends in varying strain energy distribution. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
830852
Link To Document :
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