Author/Authors :
M. M. EL-NAHASS?، نويسنده , , F. ABD EL-SALAM، نويسنده , , M. A. M. SEYAM، نويسنده ,
Abstract :
Thin films of HgTe were thermally flash evaporated onto glass and quartz substrates at room
temperature. The structural investigations showed that stoichiometric and amorphous films
were produced. The transmittance, T, and reflectance, R, of thin films of HgTe have been
measured over the wavelength ranges 300–2500 nm. From analysis of the transmittance and
reflectance results, the refractive index, n, and the extinction coefficient, k, has been studied.
Analysis of the refractive index yields a high frequency dielectric constant, ε∞, and the energy
of the effective oscillator, Eo, the dispersion energy, Ed, the covalent value β and the M−1 and
M−3 moments of the imaginary dielectric function of optical spectrum. Also, the dependence of
the real part dielectric constant ε1(hν) on its imaginary part ε2(hν) of HgTe films can be used to
determine the molecular relaxation time τ , the distribution parameter α\ and the macroscopic
(electronic) relaxation time τ o. The graphical representations of surface and volume energy loss
functions, dielectric constant, the optical conductivity as well as the relaxation time as a
function of photon energy revealed three transitions at 0.63, 2.21 and 2.76 eV.
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