Title of article
Crystalline carbon nitride films prepared by microwave plasma chemical vapour deposition
Author/Authors
JINCHUN JIANG، نويسنده , , WENJUAN CHENG، نويسنده , , YANG ZHANG?، نويسنده , , Hesun Zhu، نويسنده , , Dezhong Shen، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
5
From page
4117
To page
4121
Abstract
Crystalline carbon nitride films have been synthesized on Si (100) substrates by a microwave
plasma chemical vapour deposition technique, using mixture of N2, CH4 and H2 as precursor.
Scanning electron microscopy shows that the films consisted of hexagonal bars, tetragonal
bars, rhombohedral bars, in which the bigger bar is about 20 μm long and 6 μm wide. The
X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded
through hybridized sp2 and sp3 configurations. The x-ray diffraction pattern indicates that the
films are composed of α-, β-, pseudocubic and cubic C3N4 phase and an unidentified phase.
Raman spectra also support the existence of α- and β-C3N4 phases. Vickers microhardness of
about 41.9 GPa measured for the films. C 2006 Springer Science + Business Media, Inc
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
831007
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