Title of article :
Oxidation behavior of silicon nitride sintered with Lu2O3
additive
Author/Authors :
Madeleine K. Jordache، نويسنده , , Henry Du، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Abstract :
Kyocera SN282 silicon nitride ceramics
sintered with 5.35 wt% Lu2O3 were oxidized in dry
oxygen at 930–1,200 C. Oxidation of SN282 follows a
parabolic rate law. SN282 exhibits significantly lower
parabolic rate constants and better oxide morphological
stability than silicon nitride containing other
sintering additives under similar conditions. The
activation energy for oxidation of SN282 is
107 ± 5 kJ/mol K, suggesting inward diffusion of
molecular oxygen in the oxide layer as the ratelimiting
mechanism.
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science