Author/Authors :
Z. X. Qin، نويسنده , , H. J. Luo، نويسنده , , Z. Z. Chen، نويسنده , , Y. Lu، نويسنده , ,
T. J. Yu، نويسنده , , Z. J. Yang، نويسنده , , G. Y. Zhang، نويسنده ,
Abstract :
The AlGaN samples have been grown on
AlN interlayer (IL) by metalorganic vapor phase
epitaxy (MOVPE). The effects of AlN interlayer (IL)
on improvement of crystalline quality of AlGaN and
Al incorporation efficiency were investigated. The
samples were characterized by synchrotron radiation
X-ray diffraction (XRD) and MeV He ion Rutherford
backscattering spectrometry (RBS). The AlN IL
played a role in suppressing edge threading dislocations
(TDs) and enhancing the screw ones. It also
changed the state of stress in AlGaN from tension to
compression. Crack-free AlGaN films were grown
successfully by inserting AlN IL.
